Our high-power thyristors include phase control, medium voltage, gate turn-off and the most comprehensive offering of fast thyristors available.
High Power Thyristors
Loading, please wait ...
High Power IGBTs
We offer the widest range of pressure contact IGBTs available. Our high-reliability products feature voltage ratings from 1.7kV to 6.5kV and current ratings from 115A to 3kA.
Loading, please wait ...
High Power Diodes
Our high-power diodes offer best-in-class performance and reliability. Rectifier devices are available with blocking voltages from 200V to 7.2kV and current ratings to >10kA.
Loading, please wait ...
Documentation and Support
Use our online request for specific proposed solutions or send your technical question directly to a product specialist at request:
Loading, please wait ...
Part Numbering
Stud Devices
| W | 0508 | S | A | 04 | 0 |
| | | | | | | | | | | | |
| Device type W: Rectifier diode M: Fast/Soft recovery diode N: Phase control thyristor P: Fast turn-off thyristor S: Symmetrical Gate turn-off thyristor | Device nominal current rating | Device polarity S: Stud Anode R: Stud Cathode | Package A: 3/4" stud glass/metal C: 3/4" stud ceramic E: 3/4" HV ceramic stud with lug F: 3/4" HV ceramic stud H: 1/2" ceramic stud J: 1/2" ceramic stud with flag L: M12 stud ceramic with lug M: 3/8" stud ceramic R: M20 stud ceramic with lug & gate leads | Voltage grade - VRRM, VDRM/100 | tq code - See table for relevant code |
Capsule Devices
| W | 0646 | W | C | 15 | 0 |
| | | | | | | | | | | | |
| Device type W: Rectifier diode M: Fast/soft recovery diode F: Extra fast diode E: HP Sonic-FRDTM N: Phase control thyristor R: Distributed gate thyristor P: Fast turn-off thyristor K: Medium voltage thyristor A: Asymmetric thyristor S: Symmetrical gate turn-off thyristor H: Fast symmetrical gate turn-off thyristor G: Asymmetric gate turn-off thyristor Y: Pulse Thyristor | Device nominal current rating For devices exceeding 9999 Amperes, digit 5 of the part number changes to C (x100) | Electrode diameter W: 19mm Y: 25mm K: 29mm J: 32mm L: 34mm Q: 38mm D: 44mm N: 47mm M: 50mm V: 63mm H: 66mm/68mm Z: 73mm T: 75mm E: 85mm F: 99mm G: 125mm | Housing type (electrode diameter in brackets) A: 26mm reverse build B: 8mm (D) C: Standard outline - 14mm (W, Y), 16mm (K), 26mm (L, Q, M, T, E, H), 26.5mm (N), 33mm (V), 36mm (F, G), 37mm (Z) D: 21mm (N), 24mm (V, Z), 26mm (F, G) E: 35mm inverse build (T, M, Q, E) F: 19.5mm (L), 26mm (K, N, V), 35mm (Z), 35mm (6.5kV Sonic Diodes) G: 35mm (L, N) H: 14mm (N), 26mm (Y) J: 19.5mm (N), 25.8mm (V), 26mm (T) K: Wespack 14.5mm (J, Q, M, H, N) L: Wespack 26mm (Q, M, H) M: Wespack 33mm (H) N: 14mm (W, Y), 26mm (L) R: Wespack 14mm (Q), 26mm (N) | Voltage grade - VRRM, VDRM/100 | Special code 0: tq code (thyristors), VRRM % of VDRM for Gate turn-off thyristors - See relevant tables P: PIN diode (Product groups: W, M, F, E) A: Avalanche rated diode (W) |
Press-Pack IGBT Capsule Devices
| T | 0240 | N | B | 45 | E | |
| | | | | | | | | | | | | |
| Device type T: Press-pack IGBT | Device nominal current rating | Electrode diameter N: 47mm Q: 38mm V: 63mm H: 66mm T: 75mm E: 85mm A: 96mm D: 110mm G: 125mm B: 132mm | Die series C D F | 45Voltage grade - VRRM/100 | Build description for multiple square die A: Reverse conducting E: Asymmetric G: Reverse conducting (IGBT to diode ratio of 2:1) |